 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SI1557DH New Product Vishay Siliconix N- and P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 12 FEATURES rDS(on) (W) 0.235 @ VGS = 4.5 V 0.280 @ VGS = 2.5 V 0.340 @ VGS = 1.8 V 0.535 @ VGS = -4.5 V ID (A) 1.3 1.2 1.0 -0.86 -0.67 -0.56 D TrenchFETr Power MOSFETs D Thermally Enhanced SC-70 Package D Fast Switching to Minimize Gate and Switching Losses APPLICATIONS D Baseband DC/DC Converter Switch for Portable Electronics P-Channel -12 0.880 @ VGS = -2.5 V 1.26 @ VGS = -1.8 V SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code EC G1 2 5 G2 XX YY Lot Traceability and Date Code Part # Code D2 3 4 S2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID IDM IS 0.5 0.6 0.3 P-Channel 5 secs Steady State -12 "8 V - 0.86 -0.62 -2 -0.77 -0.55 A -0.39 0.47 0.25 W _C Symbol VDS VGS 5 secs Steady State 12 Unit 1.3 0.9 3 1.2 0.8 0.39 0.47 0.25 -55 to 150 -0.5 0.6 0.3 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71944 S-21684--Rev. B, 30-Sep-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 170 220 105 Maximum 210 265 125 Unit _C/W C/W 1 SI1557DH Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 100 mA VDS = VGS, ID = -100 mA VDS = 0 V, VGS = "8 V " VDS = 9.6 V, VGS = 0 V VDS = -9.6 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 9.6 V, VGS = 0 V, TJ = 85_C VDS = -9.6 V, VGS = 0 V, TJ = 85_C On-State Drain Currenta VDS w 5 V, VGS = 4.5 V ID(on) VDS p -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 1.2 A VGS = -4.5 V, ID = -0.77 A Drain-Source On-State Resistancea VGS = 2.5 V, ID = 1.0 A rDS(on) VGS = -2.5 V, ID = -0.6 A VGS = 1.8 V, ID = 0.2 A VGS = -1.8 V, ID = -0.2 A Forward Transconductancea VDS = 5 V, ID = 1.2 A gfs VDS = -5 V, ID = -0.77 A IS = 0.39 A, VGS = 0 V VSD IS = -0.39 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 3 -2 0.195 0.445 0.230 0.735 0.284 1.05 0.8 1.2 0.8 -0.8 1.2 -1.2 V S 0.235 0.535 0.280 0.880 0.340 1.26 W A 0.45 -0.45 1 V 1 "100 "100 1 -1 5 -5 mA m nA Symbol Test Condition Min Typ Max Unit Gate-Body Leakage IGSS Diode Forward Voltagea Dynamicb N-Ch Total Gate Charge Qg N-Channel VDS = 6 V, VGS = 4.5 V, ID = 1.2 A Gate-Source Charge Qgs P-Channel VDS = -6 V, VGS = -4.5 V, ID = -0.1 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Turn-On Delay Time td(on) N-Channel VDD = 6 V, RL = 12 W ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W P-Channel VDD = -6 V, RL = 12 W ID ^ -0.5 A, VGEN = -4.5 V, RG = 6 W P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time Source-Drain Reverse Recovery Time tf IF = 0.39 A, di/dt = 100 A/ms trr IF = -0.39 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 0.8 1.1 0.15 nC 0.3 0.20 0.25 15 17 25 30 25 15 10 10 20 25 25 25 40 45 40 25 15 15 40 40 ns 1.2 1.8 Gate-Drain Charge Qgd Rise Time tr Turn-Off Delay Time td(off) Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71944 S-21684--Rev. B, 30-Sep-02 SI1557DH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 4 VGS = 5 thru 2.5 V 3 I D - Drain Current (A) 2V I D - Drain Current (A) 3 4 TC = -55_C Vishay Siliconix N-CHANNEL Transfer Characteristics 25_C 2 1.5 V 1 1V 0 0 1 2 3 4 2 125_C 1 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.6 r DS(on) - On-Resistance ( W ) 100 Capacitance 0.5 C - Capacitance (pF) 80 Ciss 60 0.4 VGS = 1.8 V 0.3 VGS = 2.5 V 0.2 VGS = 4.5 V 40 Coss 0.1 20 Crss 0.0 0 1 2 ID - Drain Current (A) 3 4 0 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 1.2 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 1.2 A 1.4 3 r DS(on) - On-Resistance (W) (Normalized) 0.4 0.6 0.8 1.0 1.2 2 1.0 1 0.8 0 0.0 0.2 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71944 S-21684--Rev. B, 30-Sep-02 www.vishay.com 3 SI1557DH Vishay Siliconix New Product N-CHANNEL 0.6 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 4 0.5 r DS(on) - On-Resistance ( W ) I S - Source Current (A) On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 1 0.4 ID = 1.2 A 0.3 ID = 0.2 A 0.2 TJ = 25_C 0.1 0.0 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.2 5 Single Pulse Power 0.1 V GS(th) Variance (V) ID = 100 mA -0.0 Power (W) 4 3 -0.1 2 -0.2 1 -0.3 -0.4 -50 -25 0 25 50 75 100 125 150 0 10- 3 10- 2 10- 1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area, Junction-to-Ambient 10 Limited by rDS(on) IDM Limited I D - Drain Current (A) 1 1 ms ID Limited 10 ms 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 100 ms dc, 10 s, 1 s VDS - Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 71944 S-21684--Rev. B, 30-Sep-02 SI1557DH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix N-CHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 220_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (sec) Document Number: 71944 S-21684--Rev. B, 30-Sep-02 www.vishay.com 5 SI1557DH Vishay Siliconix New Product P-CHANNEL Transfer Characteristics 3.0 TC = -55_C 3V 2.5 25_C I D - Drain Current (A) 2.0 2.5 V 1.5 2V TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 3.0 VGS = 5 thru 3.5 V 2.5 Output Characteristics I D - Drain Current (A) 2.0 1.5 125_C 1.0 1.0 0.5 1.5 V 0.5 0.0 0 1 2 3 4 0.0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 2.0 r DS(on) - On-Resistance ( W ) VGS = 1.8 V C - Capacitance (pF) 1.6 120 160 Capacitance Ciss 1.2 VGS = 2.5 V 0.8 VGS = 4.5 V 0.4 80 Coss 40 Crss 0.0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 3 6 9 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 0.8 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 0.8 A 1.4 3 r DS(on) - On-Resistance (W) (Normalized) 0.6 0.9 1.2 1.5 1.2 2 1.0 1 0.8 0 0.0 0.3 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) www.vishay.com 6 Document Number: 71944 S-21684--Rev. B, 30-Sep-02 SI1557DH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 3 1 3.0 Vishay Siliconix P-CHANNEL On-Resistance vs. Gate-to-Source Voltage 1 TJ = 150_C r DS(on) - On-Resistance ( W ) 2.5 I S - Source Current (A) 2.0 ID = 0.8 A 1.5 ID = 0.2 A 1.0 TJ = 25_C 0.5 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.3 5 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 100 mA 0.1 Power (W) 4 3 0.0 2 -0.1 1 -0.2 -50 -25 0 25 50 75 100 125 150 0 10- 3 10- 2 10- 1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area, Junction-to-Ambient 10 Limited by rDS(on) IDM Limited I D - Drain Current (A) 1 1 ms 10 ms 100 ms dc, 10 s, 1 s ID Limited 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Document Number: 71944 S-21684--Rev. B, 30-Sep-02 www.vishay.com 7 SI1557DH Vishay Siliconix New Product P-CHANNEL TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 220_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (sec) www.vishay.com 8 Document Number: 71944 S-21684--Rev. B, 30-Sep-02 |
Price & Availability of SI1557DH
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |